spreading resistance
英 [ˈspredɪŋ rɪˈzɪstəns]
美 [ˈspredɪŋ rɪˈzɪstəns]
网络 扩展电阻; 扩散热阻; 扩散电阻; 展布电阻
双语例句
- Application of Two-Probe Spreading Resistance Technique in the Manufacturing Process of IC
二探针扩展电阻分布法在IC芯片制造中的应用 - It blocks the DNA molecules ( plasmids) that move from one cell to another, spreading antibiotic resistance genes.
它可以通过阻断DNA分子（质粒）在细胞间的移动来遏制抗生素抗性在细菌中的蔓延。 - The SOI structures are investigated by high resolution cross sectional transmission electron microscopy ( XTEM) and spreading resistance profile ( SRP). Experimental results show the buried Si 3N 4 layer is amorphous structure and the new SOI sample has good structural and electrical properties.
高分辨率透射电镜和扩展电阻测试结果表明得到的SOI新结构具有很好的结构和电学性能，退火后的氮化硅埋层为非晶结构。 - In the end, spreading resistance profiles ( SRP) showed excellent dielectric properties for hafnium oxide films whenever amorphous or polycrystalline.
借助扩展电阻探针（SRP）技术考察了退火前后薄膜的电学性能，证明在SOI材料上制备的多晶氧化铪薄膜同样具有较好的电介质绝缘性能。 - Effect of choosing lapping bevel angle on measurement accuracy of spreading resistance
研磨倾斜角度对扩展电阻测试量值的影响 - Spreading Resistance Technique and Its Applications
扩展电阻技术及其应用 - Calculation of Spreading Resistance Correction Factors
扩展电阻修正因子的计算 - The photo-conductive decay of the spreading resistance of Ge and Si is investigated.
研究了光谱成分不同的激发光和不同表面条件下锗和硅在触针下分布电阻的光电导衰退。 - This paper presents a novel structure of silicon spreading resistance temperature ( SRT) sensor which is compatible with the mono-integrated circuit planar process and easily integrated.
提出一种结构新颖的硅扩展电阻温度传感器，这种传感器与硅平面加工技术兼容，易于集成化。 - Application Study of Spreading Resistance Technique on Silicon and Silica base Material
扩展电阻技术在硅、硅基材料测试中的应用 - The properties of Si epitaxial layer are investigated by XRD, XTEM and spreading resistance techniques. The results show that Si epitaxial growth layer is of good crystallinity and the same orientation with Si substrate and porous silicon layer.
对获得的外延层作了XRD、XTEM和扩展电阻等测量，测量结果表明硅外延层单晶性好，并和硅衬底、多孔硅层具有相同的晶向。 - The sensing principle of the silicon spreading resistance temperature sensor ( SRT) has been investigated. To extend the working sense range of the sensor, a physical model is proposed.
阐述了一种结构特别的硅扩展电阻式元件的温度敏感原理，提出了物理模型，探讨了其工作温区拓宽机理。 - The Lattice Strain and Spreading Resistance of As~+ Implanted Si
■注入Si的晶格应变与扩展电阻 - We use spreading Resistance technique to test and analyze silicon and silica base materials. This technique is more suitable to control material quality and develop new materials.
本文利用扩展电阻技术对半导体硅、硅基材料进行测试分析，从而用以开发新材料和评估材料的质量。 - Spreading-Resistance Temperature Sensor on Thin-Film SOI
薄膜SOI扩展电阻温度传感器 - Last, the applications of spreading resistance technique are expounded.
最后，详细阐述了扩展电阻技术的应用。 - The measurement results of spreading resistance, bevel and sheet resistance indicate that optimum design and fabrication are fulfilled.
对三重扩散实验样品进行的扩展电阻、磨角以及四探针方块电阻测试表明：获得了优化的器件设计和研制条件。 - According to unilayer step-junction theory, spreading resistance correction factors are calculated by means of an electronic computer.
根据单层突变结理论，借助电子计算机计算扩展电阻修正因子。 - The effects of choosing lapping bevel angle during testing semiconductor devices and LSI chips by spreading resistance technique on measurement accuracy have been investigated in this paper.
讨论了在检测半导体器件和集成电路芯片时，不同研磨倾斜角度对扩展电阻量值的影响。 - Impurity Ga and the carrier concentration distribution are measured by SIMS and spreading resistance profile ( SRP) spectroscopy individually.
杂质Ga及载流子浓度在Si02-Si界面附近的动态分布分别采用二次离子质谱仪（SIMS）和扩展电阻（SRP）进行测量。 - A new method "directly defining method"-and measuring circuit ( for measuring η) are proposed. The effect of base spreading resistance on measuring accuracy is analysed.
提出了一种称之为直接定义法的新方法来测量η，设计了测量线路，分析了基区扩展电阻对这种方法测量精度的影响。 - A novel integrated spreading resistance silicon flow ( SRSF) sensor is presented.
提出了一种新型集成扩展电阻硅流量（SRSF）传感器。 - Calculation of Spreading Resistance Correction Factors by Piecewise Quadratic Function Interpolation
用二次函数分段插值法计算扩展电阻修正因子 - The dopant profiles in silicon sample implanted by BF 2 are measured using secondary ion mass spectrometry ( SIMS) and spreading resistance probe ( SRP) techniques.
利用二次离子质谱和扩展电阻探针技术测量了硅中注入硼的深度分布。 - Spreading resistance analysis indicates that the distri-bution of dopant is uniform in epitaxial films and steep in interface regin.
扩展电阻分析显示了外延层杂质浓度分布均匀，与衬底间的界面区杂质分布陡峭。 - Research on integrated spreading resistance silicon flow sensor
集成扩展电阻硅流量传感器的研究 - Research of R-T characteristics of silicon spreading resistance temperature sensor
硅扩展电阻式温度传感器阻温特性的研究 - Objective To investigate the relationship of gene type with drug resistance of ESBLs producing strains in clinical isolates for the guidance of rational use of antibiotics and to curb the spreading of drug resistance.
目的分析临床产超广谱β-内酰胺酶菌株的耐药表型与基因型的关系，指导临床合理应用抗生素，减少耐药菌株的出现。 - Quinolone resistance mechanism is mainly divided into chromosome mediated resistance and plasmid mediated resistance, the latter plays an important role in the spreading of antibiotic resistance.
喹诺酮类耐药机制主要分为染色体介导的耐药和质粒介导的耐药，后者对细菌耐药性的广泛传播起着重要作用。